MOSFET总览
PJQ5437E-AU
Active
PJQ5437E-AU is an automotive graide 30V P-Channel advance trench MOSFET which is designed to minimize the RDS(ON) while maximizing the avalanche ruggedness by DFN5060-8L pacakge, this helps reduce 50% of the board space than using a TO-252AA package.
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Package
DFN5060-8L
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Voltage
-30V
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Current
-42A
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Transistor Polarity
P-Channel
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Features
● AEC-Q101 qualified
● 100% UIS tested
● Reliable and Rugged
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current (Note 4) | ID | 950 | A | |
| Pulsed Drain Current | IDM | -128 | A | |
| Power Dissipation | TA=25°C | PD | 42 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 45 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | -30 | - | - | V |
| Gate Threshold Voltage | VGS(th> | VDS=VGS, ID=250uA | -1 | -1.8 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=20A | - | 12 | 15 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=20A | - | 20 | 26 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=30V, VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±25V, VDS=0V | - | - | ±10 | uA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=24V ID=20A VGS=10V |
- | 32 | - | nC |
| Total Gate Charge | Qgs | VDS=24V ID=20A VGS=10V |
- | 5 | - | nC |
| Total Gate Charge | Qgd | VDS=24V ID=20A VGS=10V |
- | 10 | - | nC |
| Input Capacitance | Ciss | VDS=25V VGS=0V f=1MHZ |
- | 1270 | - | pF |
| Output Capacitance | Coss | VDS=25V VGS=0V f=1MHZ |
- | 190 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V VGS=0V f=1MHZ |
- | 170 | - | pF |
| Turn-On Delay Time | td(on) | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 7 | - | ns |
| Turn-On Rise Time | tr | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 7 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 9 | - | ns |
| Turn-Off Fall Time | tf | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 32 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Current | IS | --- | - | - | -42 | A |
| Diode Forward Voltage | VSD | IS=20A VGS=0V |
- | -0.9 | -1.3 | V |