Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
PARAMETER | SYMBOL | LIMIT | UNITS | |
---|---|---|---|---|
Maximum Repetitive Peak Reverse Voltage | VRRM | 60 | V | |
Maximum RMS Voltage | VRMS | 42 | V | |
Maximum DC Blocking Voltage | VDC | 60 | V | |
Maximum Average Forward Current | per device per diode |
IF(AV) | 10 5 |
A |
Peak Forward Surge Current : 8.3 ms Single Half Sine-Wave Superimposed On Rated Load | IFSM | 110 | A | |
Typical Junction Capacitance Measured at 1 MHZ And Applied VR=4 V | CJ | 417 | pF | |
Typical Thermal Resistance Per Diode |
RθJA RθJC RθJL |
50 5.3 3.9 |
°C/W |
|
Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C |
Electrical Characteristics(TA = 25°C unless otherwise noted)
PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
---|---|---|---|---|---|---|
Forward Voltage Per Diode |
VF |
IF=1 A, TJ=25°C IF=3 A, TJ=25°C IF=5 A, TJ=25°C IF=1 A, TJ=125°C IF=3 A, TJ=125°C IF=5 A, TJ=125°C |
- - - - - - |
0.35 0.45 0.53 0.28 0.43 0.54 |
- - 0.6 - - - |
V |
Reverse Current Per Diode |
IR |
VR=48 V, TJ=25°C VR=60 V, TJ=25°C VR=60 V, TJ=125°C |
- - - |
18 28 6.6 |
- 210 - |
uA uA mA |