Bridge Rectifiers (VRRM = 50 - 1000V)
RPMS410
Active
Introducing PANJIT’s EMI-optimization solution - the new RPMS410 Surface Mount Glass Passivated Fast Recovery Bridge Rectifier. With fast reverse recovery time (maximum Trr at 250 ns), it is designed to optimize EMI performance while conserving PCB space. It's ideal for power adapters and PD chargers under 120W. The new bridge diode delivers exceptional performance, excellent heat-dissipation ability while ensuring reliability and efficiency in various applications.
Designed for automatic assembly, the diode enhances the efficiency of production processes, saving valuable time and resources. With its surface mount design, RPMS410 serves as an excellent substitute for traditional plug-in bridges, simplifying printed circuit board designs and conserving space. Additionally, its ultra-thin profile allows for space-saving utilization on PCBs, making it an ideal choice for space-constrained designs.
Environmental responsibility is at the core of this diode's design. It is lead-free and fully compliant with EU RoHS 2.0 standards, promoting sustainable and eco-friendly manufacturing practices. Additionally, it meets halogen-free requirements according to IEC 61249, further enhancing its environmental credentials.
Manufactured in IATF 16949 certified facilities, this diode ensures top-notch quality and adherence to rigorous industry standards. Trust in the RPMS410 diode to elevate the efficiency and performance of your power functions.
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Package
M4
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Voltage
1000V
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Current
4A
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IFSM
120A
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IR
5uA
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Application
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Features
• Fast reverse recovery time (Trr<250)
• Glass passivated chip junction
• Ideally suited for automatic assembly
• Save space on printed circuit boards
• Ultra thin profile package for space constrained utilization
• Lead free in compliance with EU RoHS 2.0
• Halogen-free according to IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 1000 | V | |
| Maximum RMS Voltage | VRMS | 700 | V | |
| Maximum DC Blocking Voltage | VDC | 1000 | V | |
| Maximum Average Forward Current | IF(AV) | 4 | A | |
| Peak Forward Surge Current : 8.3 ms Single Half Sine-Wave Superimposed on Rated Load | @TA = 25°C | IFSM | 120 | A |
| Peak Forward Surge Current : 8.3 ms Single Half Sine-Wave Superimposed on Rated Load | @TA = 125°C | IFSM | 96 | A |
| Peak Forward Surge Current : 1.0 ms Single Half Sine-Wave Superimposed on Rated Load | @TA = 25°C | IFSM | 240 | A |
| Peak Forward Surge Current : 1.0 ms Single Half Sine-Wave Superimposed on Rated Load | @TA = 125°C | IFSM | 192 | A |
| I2 t rating for fusing ( t = 8.3ms) | I2 t | 60 | A2S | |
| Typical Junction Capacitance Measured at 1 MHZ and Applied VR = 4 V | CJ | 40 | pF | |
| Maximum Reverse Recovery Time | Trr | 250 | ns | |
| Typical Thermal Resistance | RθJA RθJL RθJC |
50 35 28 |
°C/W | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Forward Voltage | VF | IF = 2A, TJ = 25°C | - | - | 1.3 | V |
| Reverse Current | IR | VR = 1000V, TJ = 25°C | - | - | 5 | μA |