MOSFET概要
PJE8416
The PJE8416 20V N-Channel Enhancement Mode MOSFET features advanced trench process technology and ESD protection in a SOT-523 Package. And it is used for load switches, PWM, NB/server motherboards in computing applications. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
SOT-523
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Voltage
20V
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Current
800mA
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Transistor Polarity
Single N-Channel
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Applications
• NB / Motherboard
• SSD
• Server Motherboard
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Features
● Advanced Trench Process Technology
● ESD Protected
● Specially Designed for Switch Load, PWM Application, etc
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±8 | V | |
| Continuous Drain Current | ID | 800 | mA | |
| Pulsed Drain Current | IDM | 1600 | mA | |
| Power Dissipation | TA=25oC Derate above 25oC |
PD | 300 2.4 |
mW mW/°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 417 | °C/W |
Electrical Characteristics (TA=25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.3 | 0.68 | 1 | V |
| Drain-Source On-State Resistance | RDS(on) |
VGS=4.5V, ID=500mA VGS=2.5V, ID=400mA VGS=1.8V, ID=200mA VGS=1.5V, ID=100mA VGS=1.2V, ID=10mA |
- - - - - |
200 240 300 370 680 |
300 400 550 800 1500 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=20V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±8, VDS=0V | - | - | ±10 | uA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=10V,ID=500mA,VGS=4.5V |
- - - |
1.1 0.2 0.1 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=10V,VGS=0V,f=1.0MHz |
- - - |
50 12 10 |
- - - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDS=10V,ID=500mA,VGS=4.5V,RG=3.3Ω |
- - - - |
2 22 57 34 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=500mA,VGS=0V | - | 0.9 | 1 | V |